| 1. | After this interview , i learned about electron mobility
通过这次访问，我了解到电子迁移。 |
| 2. | High electron mobility transistor hemt
高速电子迁移率晶体管 |
| 3. | Electron mobility detector
电子适移率检测器 |
| 4. | I - v testing of a single transistor has been carried out . the p - si film is prepared by ela , and electron mobility is calculated about 30cm2 / v
对用激光晶化法制备的多晶硅薄膜所制备的p - si - tft单管进行了-测试，计算电子迁移率为约30cm ~ 2 v |
| 5. | Due to the good performance of gaas devices of high frequency , high electron mobility and low noise , the high frequency devices are mostly made of gaas materials now
由于gaas器件优良的高频、高电子迁移率、低噪声性能，所以现在高频器件一般都选用gaas材料。 |
| 6. | Finally , the electron mobility in 6h - sic inversion layers is studied by single - particle monte carlo technique . the simulation results fit the experimental data very well
对6h sic反型层迁移率进行的moniecaro模拟结果表明，库仑中心的相关性，库仑电荷量及电荷中心和sic侣。 |
| 7. | Based on gan hemt device physics and experiment results , we found electron mobility is depend on sheet density of 2deg and proposed a new gan hemt current collapse physical model
基于ganhemt器件物理和实验分析测试结果,发现电子迁移率与二维电子气浓度有关,并提出了一种gan电流崩塌效应的新物理模型。 |
| 8. | This model described relationship of current collapse and traps in buffer layer , and the normalized product of electron mobility and 2deg density with and without current collapses was 0 . 95 vgs
该模型描述了电流崩塌效应与缓冲层中陷阱的相互关系,并获得了电流崩塌前后迁移率与二维电子气浓度乘积的归一化值0 . 95 vgs 。 |
| 9. | Mgf plays the role of segregation . the third method is to enhance the oel by means of making complex with n - vi compounds . el - vi compounds are very stable and possessing higher electron mobility than organic materials
但电子不是在真空中，而是在固体中加速的，我们称它为固态阴极射线发光或类阴极射线发光，它的激发态是成对的电子及空穴。 |
| 10. | Although electrons do not move quite as easily in polysilicon as they do in the single - crystal kind , research has produced 3 - d transistors with 90 to 95 percent of the electron mobility seen in their 2 - d counterparts
虽然电子在多晶矽中移动不如在单晶矽中那麽容易，但在这项研究做出来的三维电晶体里，电子的移动速率已达同类二维晶片的90 ~ 95 % 。 |
